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| PJ12N03D 25V N-Channel Enhancement Mode MOSFET TO-252 FEATURES * RDS(ON), VGS@10V,IDS@30A=12m * RDS(ON), VGS@4.5V,IDS@30A=22m * Advanced Trench Process Technology * High Density Cell Design For Ultra Low On-Resistance * Specially Designed for DC/DC Converters and Motor Drivers * Fully Characterized Avalanche Voltage and Current * Pb free product : 99% Sn above can meet RoHS environment substance directive request MECHANICALDATA * Case: TO-252 Molded Plastic * Terminals : Solderable per MIL-STD-750D,Method 1036.3 * Marking : 12N03D Drain Gate Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA M E TE R D r a i n- S o ur c e Vo l t a g e G a t e - S o ur c e Vo l t a g e C o nt i nuo us D r a i n C ur r e nt P ul s e d D r a i n C ur r e nt 1) S ym b o l V DS V GS ID ID M T A = 2 5 OC T A = 7 5 OC PD T J , T S TG E AS RJC RJA Li mi t 25 +20 30 200 40 23 -5 5 to + 1 5 0 130 3 .2 50 U ni t s V V A A W O M a xi m um P o w e r D i s s i p a t i o n O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e Avalanche Energy with Single Pulse ID=23A, VDD=25V, L=0.5mH Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance(PCB mounted)2 C mJ O C /W C /W O Note: 1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JUN.19.2006 PAGE . 1 PJ12N03D ELECTRICALCHARACTERISTICS P a ra me te r S ta ti c D r a i n- S o ur c e B r e a k d o w n Vo l t a g e G a t e Thr e s ho l d Vo l t a g e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e D r a i n- S o ur c e O n- S t a t e R e s i s t a nc e Ze r o G a t e Vo l t a g e D r a i n C ur r e nt Gate Body Leakage Forward Transconductance D ynami c V D S = 1 5 V , ID = 1 5 A , V G S = 5 V To t a l G a t e C h a r g e Qg G a t e - S o ur c e C ha r g e G a t e - D r a i n C ha r g e Tu r n - O n D e l a y Ti m e Tu r n - O n R i s e Ti m e Tu r n - O f f D e l a y Ti m e Tu r n - O f f F a l l Ti m e In p u t C a p a c i t a n c e O ut p ut C a p a c i t a nc e R e v e r s e Tr a n s f e r C a p a c i t a n c e S o ur c e - D r a i n D i o d e M a x. D i o d e F o r w a r d C ur r e nt D i o d e F o rwa rd Vo lta g e Is V SD IS = 3 0 A , V G S = 0 V 0 .9 5 30 1 .2 A V Qgs Qgd T d ( o n) t rr t d (o ff) tf C iss C oss C rss V D S = 1 5 V , V GS = 0 V f=1 .0 MHZ VDD=15V , RL=15 ID=1A , VGEN=10V RG=3.6 V D S = 1 5 V , ID = 1 5 A V GS = 1 0 V 2 6 .5 3 .2 4 .5 12.0 10 32 6 .5 1450 260 150 nC 14 12.5 ns 3 7 .5 8 pF 1 4 .0 B V DSS V G S ( t h) R D S ( o n) R D S ( o n) ID S S IG S S g fS V G S = 0 V , ID = 2 5 0 u A V D S = V G S , ID = 2 5 0 u A VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=25V, VGS=0V V GS = + 2 0 V , V D S = 0 V V D S = 1 0 V , ID = 1 5 A 25 1 25 1 7 .0 9.1 3 2 2 .0 m 12.0 1 +100 uA nA S V V S ym b o l Te s t C o n d i t i o n M i n. Ty p . M a x. U ni t s Switching Test Circuit VIN VDD RL VOUT Gate Charge Test Circuit VGS VDD RL RG 1mA RG STAD-JUN.19.2006 PAGE . 2 PJ12N03D Typical Characteristics Curves (TA=25OC,unless otherwise noted) ID - Drain-to-Source Current (A) I D - Drain Source Current (A) 40 V GS =4.0V, 4.5V, 5.0V, 6.0V, 10.0V 40 V DS=10V 30 30 3.5V 20 20 3.0V 2.5V T J=25 OC 10 10 T J=125 OC T J=-55 OC 2.5 3 3.5 4 4.5 0 0 1 2 3 4 5 0 1.5 2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Fig. 1-TYPICAL FORWARD CHARACTERISTIC FIG.1- Output Characteristic FIG.2- Transfer Characteristic 70 35 R DS(ON) - On-Resistance (m W ) R DS(ON) - On-Resistance (m W ) ID =30A 60 50 40 30 20 10 0 30 25 20 15 10 5 0 V GS=4.5V V GS=10V T J=125 OC T J=25 OC 2 4 6 8 10 0 10 20 30 40 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) FIG.3- On Resistance vs Drain Current 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 o FIG.4- On Resistance vs Gate to Source Voltage RDS(ON) - On-Resistance(Normalized) C - Capacitance (pF) V GS=10V I D=30A 2000 1750 Ciss 1500 1250 1000 750 500 250 Crss 0 0 5 10 15 Coss V GS=0V f=1MH Z 20 25 T J - Junction Temperature ( C) VDS - Drain-to-Source Voltage (V) FIG.5- On Resistance vs Junction Temperature FIG.6- Capacitance STAD-JUN.19.2006 PAGE . 3 PJ12N03D VGS - Gate-to-Source Voltage (V) 10 8 6 4 2 0 0 5 10 15 20 25 30 Vgs Qg V DS =15V I D =15A Vgs(th) Qg(th) Qsw Qgs Qgd Qg Qg - Gate Charge (nC) Fig.7 - Gate Charge Waveform Vth - G-S Threshold Voltage (NORMALIZED) Fig.8 - Gate Charge 33 32 31 30 29 28 27 -50 I D =250uA BVDSS - Breakdown Voltage (V) 1.2 1.1 1 0.9 0.8 0.7 -50 I D =250uA -25 0 25 50 75 100 o 125 150 -25 0 25 50 75 100 o 125 150 TJ - Junction Temperature ( C) TJ - Junction Temperature ( C) Fig.9 - Threshold Voltage vs Temperature Fig.10 - Breakdown Voltage vs Junction Temperature 100 IS - Source Current (A) V GS =0V 10 T J =125 OC 1 T J =-55 OC T J =25 OC 0.1 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD - Source-to-Drain Voltage (V) Fig.11 - Source-Drain Diode Forward Voltage LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JUN.19.2006 PAGE . 4 |
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